Senior Scientist - SiC crystal growth by PVT (APM / NSTIC-GaN), IME

Job Description We are seeking a talented and passionate Scientist/Senior Scientist to join our silicon carbide (SiC) crystal growth team. The successful candidate will play a crucial role in developing crystal growth technologies for semi-insulating SiC wafer production, which are used as substrates for RF and millimeter-wave GaN devices. This position is within the National Semiconductor Translation and Innovation Centre (NSTIC) – GaN program. Responsibilities: • Lead and manage SiC crystal growth-related projects, including planning, execution, and reporting. • Develop and optimize crystal growth technologies for semi-insulating silicon carbide (SiC) wafers used as substrates for RF and millimeter-wave GaN devices. • Design, execute, and analyze SiC crystal growth experiments using physical vapor transport (PVT) and related growth techniques. • Develop physics-based, data-driven, and digital twin models to improve growth rate, resistivity control, and wafer uniformity. • Apply AI/ML methods and materials simulations to optimize crystal growth processes and predict material properties. • Characterize SiC crystals and wafers, including resistivity, defect density, crystal quality, and uniformity. • Collaborate closely with device, epitaxy, and integration teams to ensure material performance meets device requirements. • Troubleshoot processes and equipment to maintain tool performance and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Action Plans (OCAPs), FMEA, SPC and other technical documentation. • Work with external vendors to control the wafering process and produce SiC wafers from SiC boules. • Guide equipment engineers in maintaining PVT and supporting tools to achieve tool uptime above 90%. • Document experimental results, prepare technical reports, and contribute to publications, patents, and project reviews. • Prepare and deliver technical presentations for internal reviews, conferences, and journals. • Support technology transfer and scale-up activities aligned with NSTIC–GaN program objectives. • Perform other related duties as assigned. Requirements: • PhD in Materials Science, Electrical Engineering, Physics, or a related discipline. • At least more than 8 years of hands-on experience in silicon carbide (SiC) crystal growth using the Physical Vapor Transport (PVT) method. • Experience with chamber-scale simulations for Physical Vapor Transport (PVT) processes. • Strong background in SiC materials science and characterization of SiC wafers. • Excellent communication skills, strong industry awareness, and proven problem-solving abilities. • Highly motivated self-starter with the ability to work independently and collaboratively in a team environment. • Prior industry experience is an advantage. The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.